发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which increment of instantaneous current consumption at the time of read-out of pages. <P>SOLUTION: A semiconductor memory device is provided with a plurality of sense amplifiers (3) divided into each group being a unit of red-out of pages, a sense amplifier control signal generating circuit (4) which generates a sense amplifier control signal (SAENi) enabling the sense amplifiers for each group and disabling the sense amplifiers for each group, and which output it, in which the sense amplifier control signal enables a sense amplifier of one part of a group out of groups of the plurality of sense amplifiers with timing being different from sense amplifiers of the other group, and disables with different timing, and a plurality of memory cells (1) connected to the plurality of sense amplifiers through data lines (2). <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003272390(A) 申请公布日期 2003.09.26
申请号 JP20030001253 申请日期 2003.01.07
申请人 TOSHIBA CORP 发明人 HONDA YASUHIKO
分类号 G11C16/02;G11C16/06;(IPC1-7):G11C16/02 主分类号 G11C16/02
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