发明名称 SEMICONDUCTOR MANUFACTURING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device and a manufacturing method of a semiconductor device capable of accurately executing an ion implantation process even if the ion implantation process is interrupted by a power failure. SOLUTION: A sequencer connected to an ion implanter carries out the following operations when a power failure occurs during the ion implantation process of the ion implanter. In Step S43, the sequencer holds a measured ion implantation time in an implantation time memory 11m and terminates an ion implantation time count process. Thereafter, in Step S44, the sequencer executes a recovery process for a power failure state, and when it is confirmed that the ion implantation process by the ion implanter 1 can be restarted in Step S45, an operator resets a remaining ion implantation time ((the set ion implantation time specified in Step S31)-(the measured ion implantation time in the memory 11m held in Step S43)) as a set ion implantation time in Step S46. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003272552(A) 申请公布日期 2003.09.26
申请号 JP20020068068 申请日期 2002.03.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHISUE AKIRA
分类号 H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 H01J37/317
代理机构 代理人
主权项
地址