发明名称 Multilayer structure composed of alloy layers formed from hafnium dioxide, zirconium dioxide and alumina for microelectronic applications
摘要 A multilayer structure with strong relative permittivity is made up of a number of distinct layers each with a thickness of less than 500 Angstrom and made from a base of hafnium dioxide, zirconium dioxide and alumina. The hafnium dioxide, zirconium dioxide and alumina are formed from alloys with the formula HfxZrtAly)z and their stoichiometry varies from layer to layer. The structure is made up of at least five layers and at least one of the outer layers is made up of alumina. The layers are deposited by atomic layer deposition.
申请公布号 FR2837623(A1) 申请公布日期 2003.09.26
申请号 FR20020003444 申请日期 2002.03.20
申请人 MEMSCAP 发明人 GIRARDIE LIONEL
分类号 C23C16/40;C23C16/44;C23C16/455;H01L21/28;H01L21/316;H01L29/51 主分类号 C23C16/40
代理机构 代理人
主权项
地址