| 摘要 |
PROBLEM TO BE SOLVED: To provide a masking member for forming a fine electrode which is effective to narrow the gate length of a gate electrode furnished in a field- effect transistor. SOLUTION: A masking member 3 having a penetrating part is formed of a photoresist on a semiconductor substrate 1, wherein the penetrating part is an opening pattern 7 that has a shape corresponding to the gate electrode to be formed. The masking member 3 is heat-treated such that the sidewall of the penetrating part in the masking member 3, mainly a part that contacts with the semiconductor substrate 1, is extended along the semiconductor substrate 1 to form an extended part 6. Thereby, the width of the bottom of the penetrating part is narrowed to obtain the opening pattern 7. Under the condition of masking with the masking member 3, a gate electrode is formed in a region where the semiconductor substrate 1 is exposed via the opening pattern 7, resulting in the narrowed gate length of the gate electrode. COPYRIGHT: (C)2003,JPO |
