发明名称 SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate-processing method and a device, which are capable of analyzing an environment around a substrate as a whole, and more precisely controlling the width of line and the thickness of a resist film. SOLUTION: Parameters, such as temperature, pressure, humidity, a transfer time and the like in the substrate-processing device to have effect on the formation of a resist pattern are selected as environmental conditions around a substrate, and only normal data which enable a required resist pattern to be formed are collected from the above selected parameters (step 11). At least two main components are obtained for the normal data by the use of a main component analysis technique (step 12), and a normal region is formed (step 13). The formed normal region is used as an index, when a resist pattern is actually formed on the substrate as a product, so that it can be determined easily whether the resist pattern is normal. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003273009(A) 申请公布日期 2003.09.26
申请号 JP20020370903 申请日期 2002.12.20
申请人 TOKYO ELECTRON LTD 发明人 IWANAGA SHUJI;KATAYAMA TAKASHIGE;KAMIMURA RYOICHI;TANAKA MICHIO
分类号 G03F7/30;G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/30
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