发明名称 ELECTRODE FORMING METHOD FOR SURFACE ACOUSTIC WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an electrode forming method for a surface acoustic wave (SAW) device in which power resistance is improved by suppressing the occurrence of hillocks or voids without any residue when etching an Al alloy film containing metal halides low in vapor pressure. SOLUTION: The electrode forming method for the SAW device has a step for forming the alloy film composed of Al and Mg on a substrate and a step for forming the electrode of the SAW device by selectively etching said alloy film, and the electrode of the SAW device is formed so as to be provided with sidewalls. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003273683(A) 申请公布日期 2003.09.26
申请号 JP20020075025 申请日期 2002.03.18
申请人 OKI ELECTRIC IND CO LTD 发明人 HAKAMATA SHINICHI
分类号 H01L21/302;C23F4/00;H01L21/3065;H03H3/08;H03H9/02;H03H9/145;(IPC1-7):H03H3/08;H01L21/306 主分类号 H01L21/302
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