| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an MRAN device with a diode whose performance is improved by reducing or eliminating a leakage current via a diode inside a data storage device. <P>SOLUTION: A data storage device has a plurality of word lines (26, 28), a plurality of bit lines (20, 22, 24), and a resistive crosspoint array of memory cells (40-50). Each memory cell is connected to a bit line and an isolation diode (88). The isolation diode (88) is further connected to a respective word line. The isolation diode (88) provides a unidirectional conductive path from the bit line to the word line. Each word line provides a common metal- semiconductor contact with each diode. Each diode shares the word line to have a separate metal contact located between the semiconductor portion of the common metal-semiconductor contact and its respective memory cell. <P>COPYRIGHT: (C)2003,JPO |
