| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress an increase in the number of manufacturing processes and to separately manufacture a gate electrode of an MISFET of a memory and a gate electrode of an MISFET of a logic part in a semiconductor integrated circuit device provided with the memory and the logic part on the same substrate. <P>SOLUTION: A gate electrode 10A composed of a laminated layer of a silicon polycrystal film, a tungsten nitride film and a tungsten film is formed in the memory and at the same time, a dummy gate electrode in the same structure as the gate electrode 10A is formed in the logic part. Afterwards, the tungsten film and the tungsten nitride film in the laminated film comprising the dummy gate electrode are eliminated, and further, a silicide layer 26 is formed on the surface of the silicon polycrystal film to form a gate electrode 10C composed of a silicon polycrystal film and the silicide layer 26 in the logic part. <P>COPYRIGHT: (C)2003,JPO |
