| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device and a method of manufac turing the same in which the surface of a capacitor electrode is made coarse regardless of a material for a lower electrode. <P>SOLUTION: In the semiconductor memory device having a capacitor electrode has a support layer, a grained portion, a first electrode, a capacitor insulating film and a second electrode. The grained portion based on a shape formed from a plurality of grains is arranged on the support layer arranged on a semiconductor wafer. The first electrode is arranged on the support layer to cover the grained portion and has an undulant first interface according to the shape of the grained portion on the opposite side of the grained portion. The capacitor insulating film is arranged on the first interface and has an undulant second interface according to the form of the first interface on the opposite side of the first interface. The second electrode is arranged on the insulating film. <P>COPYRIGHT: (C)2003,JPO |
