| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device wherein its throughput is improved while suppressing its current generated unnecessarily when writing data in it. <P>SOLUTION: When writing data in memory cells MC2, MC8, potentials of bit lines BL1, BL2 are brought into a writing potential VCCW and potentials of bit lines BL3, BL4 are brought into a grounding potential GND by a switch controlling circuit 30 and a feeding circuit SUO. Also, potentials of bit lines BL9, BL10 are brought into the writing potential VCCW and potentials of bit lines BL7, BL8 are brought into the grounding potential GND by a switch controlling circuit 31 and a feeding circuit SU1. <P>COPYRIGHT: (C)2003,JPO</p> |
