发明名称 METHOD OF MANUFACTURING MASK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a mask, which is capable of easily thinning the exposure part of the mask, while keeping the mask strength. <P>SOLUTION: Plasma is generated to become higher in distribution density in an irradiation region A than in other regions, and a base material 10 is subjected to dry etching to make its irradiation region A thin enough, to enable a charged particle beam to penetrate through-holes 12a bored in the irradiation region A. A support frame 11 is formed around the irradiation region A with an unprocessed part of the base material 10 in the above dry etching process, so that the mask kept with sufficiently high strength by the support frame 11 can be manufactured. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003273002(A) 申请公布日期 2003.09.26
申请号 JP20020070966 申请日期 2002.03.14
申请人 SONY CORP 发明人 NAKANO HIROYUKI
分类号 G03F1/20;G03F1/68;H01L21/027;H01L21/266;H01L21/3065;(IPC1-7):H01L21/027;G03F1/16;H01L21/306 主分类号 G03F1/20
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