SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can be miniaturized and to reduce on-state resistance. SOLUTION: An n-drift layer 2 is formed on an n+single crystal SiC substrate, a p+base layer 3 is formed on the layer 2, trenches 4 reach as far as the layer 2, and the layer 3 is formed so as to have a prescribed width W. A multiple layer 5 is formed on the bottom and side surfaces of the trench 4 and on the layer 3 between the trenches 4, in which n-layers 5a and n+layers 5b are alternately laminated. Gate electrodes 7 are formed in the layer 5 through a gate oxide film 6, and a source electrode 9 is formed so as to contact the layer 5 between the trenches 4. COPYRIGHT: (C)2003,JPO