SEMICONDUCTOR DEVICE FOR PROTECTING ELECTROSTATIC DISCHARGE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device for protecting electrostatic discharge. SOLUTION: This semiconductor device includes a second conductive heavily doped area (170) and a vertical lightly doped area (500) surrounding the heavily doped area formed on a gate electrode (130) disposed on a first conductive semiconductor substrate (100) and the semiconductor substrate at both the sides of the gate electrode. The impurity concentration and depth of the vertical lightly doped area are respectively set so as to be lower and deeper than those of the heavily doped area. It is desired that a horizontal low concentration area (140) whose impurity concentration is lower than that of the vertical lightly doped area is further disposed on the upper side face of the vertical lightly doped area. COPYRIGHT: (C)2003,JPO