METHOD FOR MANUFACTURING CAPACITY DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent deterioration of characteristics of a capacity insulating film by preventing production of impurities at an interface between a lower electrode and the capacity insulating film. SOLUTION: After depositing a first TiAlN film 11, a conductive film 12 and a second TiAlN film 13 on a supporting substrate 10, the second TiAlN film 13 is etched by using a resist pattern 14 as a mask to form a hard mask 13A. The conductive film 12 is subjected to etching by using an etching gas containing chlorine gas, and by using the hard mask 13A as a mask to form a patterned conductive film 12A. After that, the hard mask 13A and the first TiAlN film 11 are subjected to etching by using an etching gas containing chlorine for removing the hard mask 13A and forming a conductive barrier film 11A. The lower electrode 15 is irradiated with plasma composed of a gas containing fluorine for removing chlorine remaining on its surface. COPYRIGHT: (C)2003,JPO