| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which suppresses the diffusion of a metal into a porous film in a multilayer wiring using the porous film for a layer insulation film. SOLUTION: The semiconductor device is constituted as follows. A layer insulation film is laminated on a semiconductor element substrate, a wiring layer is formed in a trench formed in the layer insulation film, and at least a part of the layer insulation film is formed from a porous film having pores. A reformed layer with shrunk pores is formed on a surface layer of the porous film, and a barrier metal is formed between the layer insulation film and the wiring layer. COPYRIGHT: (C)2003,JPO
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