发明名称 THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for enabling the upsizing of a substrate and low-cost manufacturing, and a TFT obtained thereby. SOLUTION: The method for manufacturing a thin-film transistor comprises steps of coating a silicon grain layer on the substrate and irradiating the silicon grain with a laser beam. The coating is preferably carried out by printing or an ink jet. A part or the whole of the silicon grain layer is poly-siliconized or can be operated as a channel of the TFT by securing conductivity. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003273119(A) 申请公布日期 2003.09.26
申请号 JP20020067192 申请日期 2002.03.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 WATANABE AKIHIRO;NAKADA SHUHEI;NISHIMURA KUNIHIKO;HASHIMOTO NORITSUNA
分类号 H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/336 主分类号 H01L21/20
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