发明名称 |
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for enabling the upsizing of a substrate and low-cost manufacturing, and a TFT obtained thereby. SOLUTION: The method for manufacturing a thin-film transistor comprises steps of coating a silicon grain layer on the substrate and irradiating the silicon grain with a laser beam. The coating is preferably carried out by printing or an ink jet. A part or the whole of the silicon grain layer is poly-siliconized or can be operated as a channel of the TFT by securing conductivity. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003273119(A) |
申请公布日期 |
2003.09.26 |
申请号 |
JP20020067192 |
申请日期 |
2002.03.12 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
WATANABE AKIHIRO;NAKADA SHUHEI;NISHIMURA KUNIHIKO;HASHIMOTO NORITSUNA |
分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/20 |
代理机构 |
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主权项 |
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地址 |
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