| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to remove efficiently only a resist preventing change in properties of a chrome film and etching thereto, when the resist is removed from blanks prior to exposure and those posterior to exposure and development by means of dry ashing using O<SB>2</SB>gas. SOLUTION: A resist ashing method, in which a resist film (70) is removed from the blanks formed with a light shielding chrome film (66) and the resist film (70) in a glass substrate (30), wherein by using O<SB>2</SB>gas as a reactive gas the resist film (70) is removed, changing the distance of the glass substrate (30) from a plasma source (12) and a driving voltage of the plasma source (12) with a glass substrate temperature kept less than a certain degree. The glass substrate (30) temperature is detected by means of a sensor (60) provided in a holding table (28) of the glass substrate (30) or the like, whereby the distance of the glass substrate (30) from the plasma source (12) and the driving voltage of the plasma source may be controlled so that the temperature may be kept less than a certain degree. COPYRIGHT: (C)2003,JPO
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