发明名称 METHOD FOR SELECTIVELY GROWING COLUMNAR CARBON STRUCTURE, AND ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for selectively growing a columnar carbon structure in which columnar carbon structures such as carbon nano-tubes or the like are selectively grown only at essential portions, and to provide an electronic device. SOLUTION: Catalyst metal 5 is deposited on the whole surface of a substrate 1 where a diffusion-proof film pattern 4 is provided followed by heat treatment so that only the catalyst metal 5 that exists at an area other than the diffusion- proof film pattern 4 is diffused in the depth direction. Subsequently, the columnar carbon structures 6 are selectively grown starting from the catalyst metal 5 which have remained without being diffused on the diffusion-proof film pattern 4. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003273112(A) 申请公布日期 2003.09.26
申请号 JP20020074254 申请日期 2002.03.18
申请人 FUJITSU LTD 发明人 NIHEI MIZUHISA
分类号 C01B31/02;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/320 主分类号 C01B31/02
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