发明名称 ION IMPLANTATION DEVICE AND ITS OPERATION CONTROL METHOD
摘要 PROBLEM TO BE SOLVED: To provide an ion implantation device capable of reducing a loss time of the changeover between a waiting state and an operating state while accomplishing power saving in waiting, and to provide its operation control method. SOLUTION: This ion implantation device 10 comprises a mechanism from an ion source part 11 through a beam line part 12 to an ion chamber 13. A beam accepting part 118 is formed in an intermediate part of a mass spectrometer tube 117 of a mass spectrograph 115. The receiving part 118 is used for protecting the tube 117 by continuing extraction of an ion beam IB in the waiting state turning off the operation of a magnet 116 the most effective for power saving and by accepting the straightly advancing ion beam IB by the accepting part 118. Preferably, the accepting part 118 contains, for instance, a carbon material 118a, and formed into a chamber structure changeable into the atmospheric condition independently of the tube 117 so as to be replaceable. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003272554(A) 申请公布日期 2003.09.26
申请号 JP20020071246 申请日期 2002.03.15
申请人 SEIKO EPSON CORP 发明人 KINUGAWA TAKUYA
分类号 C23C14/48;H01J37/16;H01J37/317;(IPC1-7):H01J37/317 主分类号 C23C14/48
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