METHOD FOR FORMING METAL LINE USING DAMASCENE PROCESS

摘要

PURPOSE: A method for forming a metal line using a damascene process is provided to be capable of uniformly conserving the thickness of an insulating layer by using a diffusion barrier as a polish stop layer when carrying out a CMP(Chemical Mechanical Polishing) process. CONSTITUTION: The first and second insulating layer(101,103) are sequentially formed at the upper portion of a semiconductor substrate for forming a multilayer dielectric including a damascene pattern(105). A diffusion barrier(107) is formed at the resultant structure. Then, a copper layer(109) is thickly formed for filling the resultant structure. The first CMP process is carried out at the copper layer by using the diffusion barrier as a polish stop layer. Then, the polish stop layer is removed by carrying out the second CMP process for forming a copper line. Preferably, the diffusion barrier is made of TaN.