发明名称 FORMATION METHOD OF MULTILAYER THIN FILM PATTERN REQUIRING NO MASK ALIGNMENT NOR PHOTOLITHOGRAPHY PROCESS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a solar cell comprising a multilayer film cell which requires no mask alignment each time nor atmosphere releasing, whereas, in a method for manufacturing a solar cell comprising a multilayer thin film cell, a plurality of times of masking and film-forming operation thereafter are required with a different mask required to be accurately aligned each time, atmosphere releasing is required each time for taking in/out an object to be processed, and multiple times of exhausting of a film forming chamber and scavenging management for a next film forming process are laborious. <P>SOLUTION: A multilayer thin film pattern formation mask 15 is held against, with a fixed interval, a base 1 forming a multilayer thin film cell, on which material vapor beam of direct-advancing is made incident alternately at a different and appropriate angle for each material. Thus, wanted multilayer thin film patterns 4, 7, 9, 11, and 14 are formed. The above operations are performed as inline continuous process. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003273385(A) 申请公布日期 2003.09.26
申请号 JP20020075361 申请日期 2002.03.19
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 KAMEI MASAYUKI;MIHASHI TAKEFUMI
分类号 H01L31/04;H01L31/042;(IPC1-7):H01L31/04 主分类号 H01L31/04
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