| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element having high withstand voltage characteristics and low on-resistance characteristics by easily realizing a high withstand voltage. SOLUTION: This semiconductor element 1 includes an n type drain layer 20, a drain electrode 40 formed so as to be brought into contact with the n type drain layer 20, an n type drift layer 26 formed so as to be brought into contact with the n type drain layer 20, and to make drift currents flow in the on state, and to be depleted in the off state, a p type drift layer 28 formed so as to be brought into contact with the n type drain layer 20 and the n type drift layer 26, and to be depleted in the off state, a p type base layer 30 formed so as to be brought into contact with the n type drift layer 26 and the p type drift layer 28, an n<SP>+</SP>source layer 32 formed at the surface part of the p type base layer 30, an insulating gate electrode 36, and a source electrode 38. This semiconductor element 1 is provided with a cell area part where the drift currents are made to flow and a connection terminal area part formed so that the cell area part can be surrounded. In this case, a second n type drift layer 26a and a second p type drift layer 28a formed in at least one of two orthogonal directions is formed in the connection terminal area part. COPYRIGHT: (C)2003,JPO |
