| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a new non-volatile register and semiconductor device. <P>SOLUTION: The non-volatile register 300 includes at least one twin memory cell 312. The twin memory cell 312 has first and second non-volatile memory elements 108A, 108B which are controlled by a word gate 104 and controlled respectively by first and second control gates 106A, 106B. In either of the first and second non-volatile memory elements 108A, 108B, data are memorized, and the other is made not to function as a data memorizing element. <P>COPYRIGHT: (C)2003,JPO</p> |
