发明名称 |
TRANSCONDUCTOR HAVING STRUCTURE OF CROSSING PAIRS |
摘要 |
PROBLEM TO BE SOLVED: To provide a transconductor which widens an operation frequency range while maintaining linearity and is operated even under a high voltage. SOLUTION: The transconductor having a structure of crossing pairs is composed of first and second MOS transistors mutually connecting their drain terminals and their source terminals in series to a voltage source, a first bipolar transistor connecting its collector terminal with the output current terminal of a current source and connecting its emitter terminal with the gate terminal of said second MOS transistor, a second bipolar transistor connected in series to the first bipolar transistor and connecting its base terminal to a node between said first MOS transistor and said second MOS transistor, and a third MOS transistor connecting its gate terminal to an external signal input terminal and connecting its drain terminal to the emitter terminal of said second bipolar transistor. COPYRIGHT: (C)2003,JPO
|
申请公布号 |
JP2003273665(A) |
申请公布日期 |
2003.09.26 |
申请号 |
JP20030055088 |
申请日期 |
2003.03.03 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LEE JEONG-WON;CHO GEA-OK;LEE JUNG-EUN |
分类号 |
H03F1/42;H02M7/217;H03F1/22;H03F3/45;(IPC1-7):H03F1/42 |
主分类号 |
H03F1/42 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|