| 摘要 |
PROBLEM TO BE SOLVED: To provide a high output semiconductor laser. SOLUTION: This semiconductor laser comprises an active layer, a ridge formed like a belt at a part on the active layer, a current rejecting layer which is formed in both sides of the ridge to reject a current flowing into the active layer, and a thin cap layer which is formed on the current rejecting layer and has small spreading resistance in the lateral direction. Since the cap layer is provided, the current rejected by the current rejecting layer can be guided effectively to the ridge and thereby a high output semiconductor laser can be obtained. COPYRIGHT: (C)2003,JPO
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