发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS CONTROL METHOD, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE SYSTEM AND ITS CONTROL METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To obtain a nonvolatile semiconductor memory device and its control method, a nonvolatile semiconductor memory device system and its control method in which a lifetime being same as that of a magnetic disk device is realized and high reliability can be secured. <P>SOLUTION: This device is provided with a plurality of memory cells 41-48 in which one end is connected to a source line and the other end is connected to a bit line, and adjacent source and drain are connected mutually, and a control means in which information 45 related to a file storage position is written successively in memory cell regions 41-48 previously erased in the direction from the memory cell 48 of a source line side to the memory cell 41 of a bit line side whenever the regions are updated, write-in data 45 in a position being closet to the bit line is made the latest relation information. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003272391(A) 申请公布日期 2003.09.26
申请号 JP20030026478 申请日期 2003.02.03
申请人 TOSHIBA CORP 发明人 OKAMOTO YUTAKA;TANAKA YOSHIYUKI
分类号 G11C16/02;G06F12/00;G06F12/02;G11C16/04;(IPC1-7):G11C16/02 主分类号 G11C16/02
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