| 摘要 |
<P>PROBLEM TO BE SOLVED: To address, in the present invention, a problem how to prevent contamination of a wafer and a chamber in a plasma processing apparatus and a plasma processing method suitable for usage, in the case of wafer plasma etching. <P>SOLUTION: The plasma processing apparatus in which a processing gas is made into a plasma state, and a wafer surface is processed by erupting the processing gas from a nozzle 24a to the wafer 2 mounted on a XYZ table 28, wherein a mixed gas of sulfur hexafluoride (SF<SB>6</SB>) gas, argon (Ar) gas, and oxygen (O<SB>2</SB>) gas is used as the processing gas, and a volume ratio of oxygen (O<SB>2</SB>) gas to sulfur hexafluoride (SF<SB>6</SB>) gas is set in the range from 11 to 25%. <P>COPYRIGHT: (C)2003,JPO |
