发明名称 COMPOSITION FOR LOW DIELECTRIC CONSTANT FILM FORMATION, LOW DIELECTRIC CONSTANT FILM, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a composition for low dielectric constant film formation or the like for forming a low dielectric constant film of high strength. SOLUTION: The composition for low dielectric constant film formation contains a siloxane resin, having a thermally decomposable group, decomposing thermally at 150-350°C, in a side chain. It is preferable that the thermally decomposable group includes at least either ester coupling or ether coupling, the siloxane resin is obtained to polymerize a silane compound, which is a group including at least one of ester coupling and ether coupling in four groups coupled in silane, the silane compound is expressed by at least one of formula (1) and formula (2), and weight average molecular weight (Mw) of the siloxane resin is in the range of 5,500-50,000,000. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003273098(A) 申请公布日期 2003.09.26
申请号 JP20020077380 申请日期 2002.03.19
申请人 FUJITSU LTD 发明人 NAKADA YOSHIHIRO;SUZUKI KATSUMI;SUGIURA IWAO;YANO EI;NAMIKI TAKAHISA
分类号 C08G77/14;H01L21/312;H01L21/768;H01L23/522;(IPC1-7):H01L21/312 主分类号 C08G77/14
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