| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a back side grinding method and a method of manufacturing a semiconductor device, where dispersion of thickness in a chip is reduced, after conducting the back grinding of a semiconductor wafer. <P>SOLUTION: The back side grinding method has the steps of forming bumps 19 on the semiconductor wafer 10 using a resist pattern 22 as a mask, adhering a protective tape 15 on the bumps and the resist pattern, performing vacuum chucking on the protective tape by a vacuum chuck cup to hold semiconductor wafer 10, and pressing the back side of the semiconductor wafer 10 held by the vacuum chuck cup against the surface of a rotating rotational grinder, to grind the back side of the semiconductor wafer. <P>COPYRIGHT: (C)2003,JPO |
