| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the occurrence of a small tilt grain boundary which occurs, when a 3-5 compound semiconductor is manufactured by lateral direction selective growth using a stripe-like mask. <P>SOLUTION: Stripe-like mask layers 4 are formed on c-faces 3A, in a first 3-5 compound semiconductor layer 3 which is a base crystal so that the direction of a stripe is shifted, in the range of 0.095 degrees to 9.6 degrees, from the direction of <1-100> Second 3-5 compound semiconductor layers 5 are selectively grown in a lateral direction on a c-face 3A by using the mask layers 4. The stripe direction of the mask layers 4 is shifted within the above range from the prescribed direction of <1-100>. Thus, fluctuations in a c-axis of the prescribed compound semiconductor layer which selectively grows in the lateral direction on the c-face of the base crystal, are reduced, and the small tilt grain boundary generated in the second 3-5 compound semiconductor layer 5 is reduced. <P>COPYRIGHT: (C)2003,JPO |
