SEMICONDUCTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device using an STI which provides satisfactory transistor characteristics. SOLUTION: The semiconductor device comprises: a silicon substrate 1 forming semiconductor elements; element isolating trenches 6 formed in the silicon substrate 1 for isolating active regions in the substrate 1, each having a trapezoidal profile with a width gradually reduced away from the surface; a first liner insulation layer 7 composed of a silicon oxide film or a silicon nitride oxide film of 1-5 nm formed on the trench surface; a second liner insulation layer 8 composed of a silicon nitride film of 2-8 nm formed on the trench surface; and element isolating regions 9 filling up recesses defined by the second liner insulation layer. COPYRIGHT: (C)2003,JPO