| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a large capacity LSI wherein the occupied area of a cell is reduced, enabling retrieving operation with low power consumption and at high speed. <P>SOLUTION: A TCAM cell is constituted of two dynamic type memory cells consisting of MOS transistors 101, 102 and capacitor elements 105, 106, and a coincidence comparing circuit consisting of two MOS transistors 103, 104. Therefore, the occupied area of cell can be reduced. <P>COPYRIGHT: (C)2003,JPO |
