| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element that is formed by stacking a plurality of laminates of films with pin-type junction and has improved conversion efficiency by preventing electrical loss due to band offset. <P>SOLUTION: A stacked film 11 on a surface side is formed by stacking an amorphous p-type SiC layer 11p, i-type Si layer 11i and n-type Si layer 11n. Moreover, the stacked film 12 on a back side is formed by stacking a microcrystal p-type SiGe layer 12p, i-type SiGe layer 12i and n-type SiGe layer 12n. Forbidden band widths E<SB>gp</SB>, E<SB>gi</SB>and E<SB>gn</SB>(eV) of each layer are formed to satisfy the formula of E<SB>gp</SB>=E<SB>gi</SB>=E<SB>gn</SB>. Moreover, it is formed in such a manner that E<SB>gi</SB>is smaller than the forbidden band width of the i-type Si layer 11i. <P>COPYRIGHT: (C)2003,JPO</p> |
