发明名称 POSITIVE PHOTORESIST COMPOSITION AND METHOD FOR FORMING THIN FILM RESIST PATTERN FOR OBLIQUE IMPLANTATION PROCESS
摘要 A composition includes (A) a novolak resin containing at least 20% by mole of a m-cresol repeating unit and having a 1-ethoxyethyl group substituting for part of hydrogen atoms of phenolic hydroxyl groups, (B) a quinonediazide ester of, for example, the following formula, and (C) 1,1-bis(4-hydroxyphenyl)cyclohexane.
申请公布号 KR20030076177(A) 申请公布日期 2003.09.26
申请号 KR20020071417 申请日期 2002.11.16
申请人 发明人
分类号 G03F7/039;G03F7/004;G03F7/022;G03F7/023;G03F7/40;H01L21/027;H01L21/266 主分类号 G03F7/039
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