| 发明名称 |
Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same |
| 摘要 |
In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of AlxGa1-xAs, where x>0.4, abutting a base layer 8.
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| 申请公布号 |
US6025615(A) |
申请公布日期 |
2000.02.15 |
| 申请号 |
US19940363479 |
申请日期 |
1994.12.23 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LIU, WILLIAM UEI-CHUNG;HILL, DARRELL GLENN |
| 分类号 |
H01L29/205;H01L21/331;H01L29/08;H01L29/73;H01L29/737;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/205 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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