发明名称 Enhanced reactive DC sputtering system
摘要 An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor is switched to ground or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system in the power source.
申请公布号 US6024844(A) 申请公布日期 2000.02.15
申请号 US19980024247 申请日期 1998.02.17
申请人 ADVANCED ENERGY INDUSTRIES, INC. 发明人 DRUMMOND, GEOFFREY N.;SCHOLL, RICHARD A.
分类号 C23C16/50;B01J19/08;C23C14/34;C23C14/38;C23C16/509;H01J37/34;H01L21/31;H05H1/00;H05H1/24;H05H1/46;H05H1/48;(IPC1-7):C23C14/34 主分类号 C23C16/50
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