III-GROUP NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element including a III-group nitride semiconductor as a substrate which exhibits an excellent operation characteristic and assures a longer laser oscillation life. SOLUTION: A laser beam guiding region of the III-group nitride semiconductor laminated layer structure on a GaN substrate is provided at the position deviated from the upper side of a relocation concentrated region vertically penetrating the substrate. Moreover, electrodes provided on the upper surface of the laminated layer structure and the lower surface of the substrate are provided at positions deviated from the upper and lower sides of the relocation concentrated region. It is also possible that dielectric material layers are provided at upper and lower portions of the relocation concentrated region between the upper surface of laminated layer structure and the lower surface of substrate, and the electrodes are not in contact with the positions. COPYRIGHT: (C)2003,JPO