| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method of a semiconductor device in which generation of a reverse layer due to bouncing-out of atoms of an embedded layer is eliminated in embedding vapor phase growth. SOLUTION: In this manufacturing method, an impurity layer having a second conductivity-type or a conductivity-type opposite to a first conductivity-type is formed on the surface of a first conductivity-type silicon substrate by photolithography, a vapor phase growth layer of the same conductivity-type as that of the first conductivity-type is formed on the upper parts of the first and second conductivity-type layers, thereby forming a structure in which the second conductivity-type layer is used as an embedded layer. In forming the second conductivity-type layer, a surface concentration is lowered by ion implantation, a desired high-concentration profile is formed in the arbitrary inside and the surface concentration of the second conductivity-type layer is formed to be thin. In this way, in forming the vapor phase growth layer of the same conductivity-type as that of the first conductivity-type, an embedded structure element is formed without forming the second conductivity-type layer on a portion other than the second conductivity-type forming layer due to bouncing- out of atoms. COPYRIGHT: (C)2003,JPO
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