| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that surface roughness of a photoresist occurs if applied as it is to plasma etching with an SiO<SB>2</SB>film through an ArF photoresist, in correspondence with fine working, when the plasma of mixture gas of C<SB>4</SB>F<SB>6</SB>and O<SB>2</SB>and Ar is used to improve the selectivity of the SiO<SB>2</SB>film against an KrF photoresist (etching rate of SiO<SB>2</SB>film/etching rate of KrF photoresist) at plasma etching with the SiO<SB>2</SB>film through a KrF photoresist mask pattern. SOLUTION: In the plasma etching method, the gas containing C<SB>4</SB>F<SB>6</SB>and O<SB>2</SB>and CO is used as a processing gas for plasma etching to suppress surface roughness of a photoresist. The flow rate ratio between O<SB>2</SB>and CO in the processing gas is preferred to be 1.1-3.7. COPYRIGHT: (C)2003,JPO
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