| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which easily enables, gate wiring and micro-miniaturization and has a higher withstand voltage, and a manufacturing method thereof. SOLUTION: The semiconductor device comprises a semiconductor layer (21) on a substrate (20), a first gate electrode (25) provided on the layer (21), and a second gate electrode (28) adjacent to one side of the first gate electrode in a channel length direction and having a work function different from that of the first gate electrode. The first and the second gate electrodes constitute substantially a single gate electrode, because they are adjacent to each other. Therefore, single gate electrode wiring can be used. Further, because the second gate electrode having the work function different from (more specifically, smaller than) that of the first gate electrode, is formed to be adjacent to and in contact with the first gate electrode, a variation in a depletion layer on the drain side is made moderate and an electric field concentration can be alleviated, and the micro-miniaturization can easily be carried out though a plurality of gate electrodes are provided. COPYRIGHT: (C)2003,JPO
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