PN-JUNCTION COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, LAMP, AND LIGHT SOURCE

摘要

PROBLEM TO BE SOLVED: To solve a problem that it is difficult to form a low-resistance evaporation preventing layer with aluminum gallium nitride on a light emitting layer made of a group III nitride semiconductor containing indium in a group III nitride semiconductor light emitting device.

SOLUTION: An evaporation preventing layer is made of a boron phosphide semiconductor. In addition, a second barrier layer to be provided on the evaporation preventing layer is made of an undoped boron phosphide semiconductor to which no impurities are intentionally added.

COPYRIGHT: (C)2003,JPO