CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD FOR CONTROLLING THE SAME

摘要

PURPOSE: A CMP(Chemical Mechanical Polishing) apparatus and a method for controlling the same are provided to be capable of accurately measuring the thickness of a polish object layer by using a single end point detector and being easily used at a conventional equipment by simply modifying the software of the conventional equipment. CONSTITUTION: A CMP apparatus is provided with a storage part(180) including a table having the data of the quantity of light detected at an end point according to the initial thickness corresponding to the polishing process recipe of a polish object layer of a semiconductor wafer, an input part(190) for inputting the polishing process recipe of the polish object layer, an end point detector(150) for detecting the quantity of light reflected from the polish object layer by irradiating light to the semiconductor wafer, and a controller(160) for controlling a polishing process.