| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same in which the contact defect of bit contact is prevented. <P>SOLUTION: At least, the method has: a process for forming a first inter-layer film 5, a capacitance contact plug 6 and a lower bit contact plug 7 on a silicon substrate 1; a process for forming a stopper film 8 and a second inter-layer film 9 thereon; a process for forming a capacitor composed of a lower electrode 10, a capacity insulating film and an upper electrode 11 on the second inter-layer film; a process for forming a stopper film 12 on the upper electrode and forming openings in the stopper film and the upper electrode; a process for forming a sidewall insulating film 13 composed of the same material as that of the stopper film on an opening sidewall; a process for forming a third inter-layer film 15 thereon; and a process for forming a bit contact plug 14 by forming a bit contact hole composed of the hole of an opening on a resist pattern and a hole determined from the stopper film and the sidewall insulating film in a manner of self-matching. <P>COPYRIGHT: (C)2003,JPO |
