发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND METHOD FOR FORMING MASK SUITABLE THEREFOR
摘要 A phase shift mask formed by extracting connecting nodes such as ends, corners and intersections, of a random interconnection pattern is multiple-exposed, along with a phase shift mask for exposing other regions, onto the same resist film through a projection optical system. Alternatively, an arbitrary pattern is quantized to two to four phase shift masks and similarly multiple-exposed. The interconnection pitch of a logic LSI can be reduced by optical lithography and a high-performance LSI can be fabricated at low cost and with high throughput while suppressing an interconnection lag.
申请公布号 WO0025181(A1) 申请公布日期 2000.05.04
申请号 WO1998JP04810 申请日期 1998.10.23
申请人 HITACHI, LTD.;FUKUDA, HIROSHI 发明人 FUKUDA, HIROSHI
分类号 G03F1/26;G03F1/30;G03F1/32;G03F1/68;G03F7/20;H01L21/768 主分类号 G03F1/26
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