| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a simple construction and reduced in defective products. <P>SOLUTION: A first TFT 43 and a second TFT 44, adjacent to each other in a first direction A1 in which signal wiring 35 extends, share a source region 23 integral with one semiconductor piece 22 and electrically connected to the signal wiring 35, and are formed symmetrically with respect to a reference plane P1. Two scan wirings 29a, 29b, extending in a second direction A2 perpendicular to the first direction A1 and electrically connected to the channel regions 24, 25 of the first and the second TFT 43, 44, and auxiliary capacity wirings 30a, 30b for forming auxiliary capacities between drain electrodes 36, 37 electrically connected to the first and the second TFT 43, 44 and the wirings 30a, 30b are arranged symmetrically with respect to the reference plane P1, respectively. <P>COPYRIGHT: (C)2003,JPO</p> |
