发明名称 METHOD OF CAUSING CVD THIN FILM FOR DEPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a method of causing CVD thin film to be deposited by which a vaporizer can be used for a long period, without causing clogging, etc., and in addition, a raw material can be supplied stably to a reaction section. SOLUTION: In this method, a prescribed CVD thin film is formed by making a CVD raw material solution and a gas flow to a CVD chamber for an appropriate period of time through the vaporizer. In this method, only a solvent capable of dissolving deposits adhering to the vaporizer is made to flow to the vaporizer, by switching the gas from the outlet of the vaporizer to gas the evacuation side, after the prescribed period of time has elapsed. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003273030(A) 申请公布日期 2003.09.26
申请号 JP20020075258 申请日期 2002.03.18
申请人 WATANABE SHOKO:KK 发明人 YAMOTO HISAYOSHI;FUKAGAWA MITSURU
分类号 C23C16/40;C23C16/44;C23C16/448;H01L21/205;H01L21/31;(IPC1-7):H01L21/205 主分类号 C23C16/40
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