| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device of which data read-out speed is increased. SOLUTION: Data pre-fetched 2 bits from a memory array and transmitted to an amplifier circuit 154 by a data bus is ordered in accordance with the least significant bit of a column address being a start address externally given. A first data is outputted to read-out data bus RD0, ZRD0, and transmitted directly to an output data latch 158. A second data is transmitted to the output data latch 158 after it is held in a second data latch 156. As the first data is transmitted directly to the output data latch 158 from the amplifier circuit 154, a time from receiving a read-out command to start of data output can be shortened. COPYRIGHT: (C)2003,JPO
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