发明名称 |
MEMORY CELL STRUCTURE WITH TRENCH CAPACITOR AND METHOD FOR FABRICATION THEREOF |
摘要 |
Within both a memory cell structure and a method for fabricating the memory cell structure there is employed a storage capacitor formed within a trench adjoining an active region of a semiconductor substrate. Within the memory cell structure and the method for fabrication thereof, both the active region of the semiconductor substrate and the trench are contained within a doped well within the semiconductor substrate.
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申请公布号 |
US2003178661(A1) |
申请公布日期 |
2003.09.25 |
申请号 |
US20020102280 |
申请日期 |
2002.03.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TZENG KUO-CHYUAN;WANG CHEN-JONG;CHANG CHUNG-WEI |
分类号 |
H01L21/334;H01L21/336;H01L21/8242;H01L21/8244;H01L27/108;H01L27/11;H01L29/76;H01L29/94;H01L31/119;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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