发明名称 |
METHODS USED IN FABRICATING GATES IN INTEGRATED CIRCUIT DEVICE STRUCTURES |
摘要 |
One embodiment of the present invention is a method used to fabricate a device on a substrate, which method is utilized at a stage of processing wherein a metal gate stack is disposed or formed over a gate oxide, which metal stack includes a refractory metal layer disposed or formed over a refractory metal barrier/adhesion layer, which method includes steps of: (a) etching the refractory metal layer and stopping on or in the refractory metal barrier/adhesion layer; and (b) etching the refractory metal barrier/adhesion layer using a passivation etching chemistry without oxygen. |
申请公布号 |
WO03079425(A1) |
申请公布日期 |
2003.09.25 |
申请号 |
WO2003US07860 |
申请日期 |
2003.03.14 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YI, SANG, IN;NAM, SEOWOO;HUANG, KENLIN;NALLAN, PADMAPANI, C. |
分类号 |
H01L21/28;H01L21/3213;H01L29/49 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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