发明名称 |
ETCH PATTERN DEFINITION USING A CVD ORGANIC LAYER AS AN ANTI-REFLECTION COATING AND HARDMASK |
摘要 |
A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer. |
申请公布号 |
WO03007344(A3) |
申请公布日期 |
2003.09.25 |
申请号 |
WO2002US20933 |
申请日期 |
2002.07.01 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MUI, DAVID, S.;LIU, WEI;LILL, THORSTEN;BENCHER, CHRISTOPHER, DENNIS;WANG, YUXIANG, MAY |
分类号 |
H01L21/027;H01L21/28;H01L21/308;H01L21/311;H01L21/314;H01L21/3213 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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